MBEgrowth off erromagnetic single crystal Heusler alloys
by
J. W. Dong, J. Lu, J. Q. Xie, L. C. Chen, R.D. James
in
Physica, E10, pp. 428–432, 2001.
Category: Journal Article
Keywords: Heusler alloys; Ni2MnGa/GaAs; Ni2MnGe/GaAs; Ni2MnIn/InAs; MBE
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Abstract:
Ferromagnetic Ni2MnGa and Ni2MnGe have been grown on GaAs(0 0 1) and Ni2MnIn on InAs(0 0 1) by molecular beam epitaxy. In situ re7ection high energy electron di8raction, ex situ X-ray di8raction and transmission electron microscopy selected area electron di8raction indicate the growth ofpseudomorphic single crystal (0 0 1) Ni2MnGa on (0 0 1) GaAs. Superconducting quantum interference device magnetometry measurements show the ;lms to be ferromagnetic with in-plane magnetization and Curie temperatures of ∼340, ∼320, and ∼290K for Ni2MnGa, Ni2MnGe and Ni2MnIn, repectively.
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